Amorphous oxide semiconductors have important industrial applications in opto-electronic devices due to their transparency and high electrical conductivity. It is important to understand the arrangements of the atoms in these semiconductors since they determine the electrical properties of the materials. To investigate the atomic structure of indium oxide semiconductors, a series of nine thin films were deposited at different temperatures. Wide-angle x-ray scattering data were collected at Argonne National Laboratory. The images for the partially amorphous and fully crystalline films were calibrated, integrated, and analyzed. Structural results include the lattice parameters and positions of the atoms in the bixbyite phase. The lattice parameters directly correlate with the measured electrical properties of the samples.

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