Recently, the electronic industry has been shifting towards devices that can be controlled by touching the screen with one or more fingers. This technology is made possible by using transparent conducting oxides (TCOs). Zinc oxide (ZnO) is a potential replacement for the most currently used TCO (indium-tin oxide) due to its comparable optical properties. However, the doping mechanisms of zinc oxide need to be understood and improved. The goal of this research was to prepare n-type, aluminum-doped ZnO. Several dopant percentages were studied to investigate the optimum concentration. The electrical properties for all doping levels improved compared to undoped ZnO.

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